SSM3K02F datasheet(2/5 Pages) TOSHIBA

номер детали	SSM3K02F

подробное описание детали	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

PDF	5 Pages

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

SSM3K02F

2003-03-27

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0

±5

Drain-source breakdown voltage

V (BR) DSS

ID = 1 mA, VGS = 0

Drain cut-off current

IDSS

VDS = 30 V, VGS = 0

Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.6

1.1

Forward transfer admittance

ïYfsï

VDS = 3 V, ID = 0.5 A

(Note)

1.5

ID = 0.5 A, VGS = 4 V

(Note)

140

200

Drain-source ON resistance

RDS (ON)

ID = 0.5 A, VGS = 2.5 V

(Note)

180

250

Input capacitance

Ciss

VDS = 10 V, VGS = 0, f = 1 MHz

115

Reverse transfer capacitance

Crss

VDS = 10 V, VGS = 0, f = 1 MHz

Output capacitance

Coss

VDS = 10 V, VGS = 0, f = 1 MHz

Turn-on time

ton

Switching time

Turn-off time

toff

VDD = 15 V, ID = 0.5 A,

VGS = 0~2.5 V, RG = 4.7 W

Note: Pulse test

Switching Time Test Circuit

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this

product. For normal switching operation, VGS (ON) requires higher voltage than Vth and VGS (off) requires lower

voltage than Vth.

(Relationship can be established as follows: VGS (off) < Vth < VGS (ON))

Please take this into consideration for using the device.

VGS recommended voltage of 2.5 V or higher to turn on this product.

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