SSM3K02F

2003-03-27

1

TOSHIBA Field Effect Transistor

Silicon N Channel MOS Type

SSM3K02F

High Speed Switching Applications

· Small package

==== 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

30

V

Gate-source voltage

±10

V

DC

1.0

Drain current

Pulse

2.0

A

Drain power dissipation

200

mW

Channel temperature

150

°C

Storage temperature range

-55~150

°C

Marking

Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

Unit: mm

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1F

Weight: 0.012 g (typ.)