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FDMF5821 датащи(PDF) 15 Page - ON Semiconductor

номер детали FDMF5821
подробное описание детали  Smart Power Stage (SPS) Module with Integrated Temperature Monitor
PDF  26 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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FDMF5821 • Rev. 1.0
14
Low-Side MOSFET Off to High-Side MOSFET On
Dead Time in CCM1 / DCM
To prevent overlap during the low-side MOSFET off to
high-side MOSFET on switching transition, adaptive
circuitry monitors the voltage at the GL pin. When the
PWM signal goes HIGH, GL goes LOW after a
propagation delay (tPD_PHGLL). Once the GL pin is
discharged below ~ 1
– 2 V, GH is pulled HIGH after an
adaptive delay, tD_DEADON.
Some situations where the ZCD# rising-edge signal
leads the PWM rising edge by tens of nanoseconds,
can cause GH and GL overlap. This event can occur
when the PWM controller sends PWM and ZCD#
signals that lead, lag, or are synchronized. To avoid this
phenomenon, a secondary fixed propagation delay
(tFD_ON1) is added to ensure there is always a minimum
delay between low-side MOSFET off to high-side
MOSFET on.
Low-Side MOSFET Off to High-Side MOSFET On
Dead Time in CCM2
As noted in the CCM2 Operation section, the low-side
driver strength is scale-able upon detection of CCM2.
CCM2 feature slows the charge and discharge of the
low-side MOSFET gate to minimize peak switching
voltage overshoots during low-side MOSFET hard-
switching (negative inductor current). To avoid cross-
conduction, the slowing of the low-side gate also
requires an adjustment (increase) of the dead time
between low-side MOSFET off to high-side MOSFET
on.
A
fairly
long
fixed
dead
time
(tFD_ON2)
is
implemented to ensure there is no cross conduction
during this CCM2 operation.
High-Side MOSFET Off to Low-Side MOSFET On
Dead Time in CCM1 / DCM
To get very short dead time during high-side MOSFET
off to low-side MOSFET on transition, a fixed-dead-time
method is implemented in the SPS gate driver. The
fixed-dead-time circuitry monitors the internal HS signal
and adds a fixed delay long enough to gate on GL after
a desired tD_DEADOFF (~ 5 ns, tD_DEADOFF = tFD_OFF1),
regardless of SW node state.
Exiting 3-State Condition
When exiting a valid 3-state condition, the gate driver of
the FDMF5821 follows the PWM input command. If the
PWM input goes from 3-state to LOW, the low-side
MOSFET is turned on. If the PWM input goes from 3-
state to HIGH, the high-side MOSFET is turned on. This
is illustrated in Figure 29 below.
Inductor
Current
PWM
SW
GL
GH to SW
VIH_PWM
VIL_PWM
VTRI_HI
VTRI_LO
VIH_PWM
3-State
Window
VTRI_HI
VTRI_LO
VIH_PWM
VTRI_HI
VIL_PWM
VIL_PWM
10%
90%
10%
10%
90%
90%
10%
10%
90%
10%
10%
tPD_PHGLL
tD_DEADON
tPD_PLGHL
tD_DEADOFF
tPD_PHGLL
tD_DEADON2
tD_HOLD-OFF
tPD_THGHH
tPD_TLGLH
Less than
tD_HOLD-OFF
Less than
tD_HOLD-OFF
3-State
tHOLD_OFF
Window
3-State
tHOLD_OFF
Window
GL / GH
off
GL / GH
off
tD_HOLD-OFF
NOTES:
tPD_XXX = propagation delay from external signal (PWM, ZCD#, etc.) to IC generated signal. Example : tPD_PHGLL – PWM going HIGH to low-side MOSFET VGS (GL) going LOW
tD_XXX = delay from IC generated signal to IC generated signal. Example : tD_DEADON – low-side MOSFET VGS LOW to high-side MOSFET VGS HIGH
PWM
tPD_PHGLL = PWM rise to LS VGS fall, VIH_PWM to 90% LS VGS
tPD_PLGHL = PWM fall to HS VGS fall, VIL_PWM to 90% HS VGS
tPD_PHGHH = PWM rise to HS VGS rise, VIH_PWM to 10% HS VGS (ZCD# held LOW)
Exiting 3-State
tPD_TSGHH = PWM 3-State to HIGH to HS VGS rise, VIH_PWM to 10% HS VGS
tPD_TSGLH = PWM 3-State to LOW to LS VGS rise, VIL_PWM to 10% LS VGS
ZCD#
tPD_ZLGLL = ZCD# fall to LS VGS fall, VIL_ZCD# to 90% LS VGS
tPD_ZHGLH = ZCD# rise to LS VGS rise, VIH_ZCD# to 10% LS VGS
Dead Times
tD_DEADON = LS VGS fall to HS VGS rise, LS-Comp trip value to 10% HS VGS
tD_DEADOFF = SW fall to LS VGS rise, SW-Comp trip value to 10% LS VGS
Figure 29.
PWM HIGH / LOW / 3-State Timing Diagram



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