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FDMF5821 датащи(PDF) 15 Page - ON Semiconductor |
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FDMF5821 датащи(HTML) 15 Page - ON Semiconductor |
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15 / 26 page ![]() © 2016 Semiconductor Components Industries, LLC www.onsemi.com FDMF5821 • Rev. 1.0 14 Low-Side MOSFET Off to High-Side MOSFET On Dead Time in CCM1 / DCM To prevent overlap during the low-side MOSFET off to high-side MOSFET on switching transition, adaptive circuitry monitors the voltage at the GL pin. When the PWM signal goes HIGH, GL goes LOW after a propagation delay (tPD_PHGLL). Once the GL pin is discharged below ~ 1 – 2 V, GH is pulled HIGH after an adaptive delay, tD_DEADON. Some situations where the ZCD# rising-edge signal leads the PWM rising edge by tens of nanoseconds, can cause GH and GL overlap. This event can occur when the PWM controller sends PWM and ZCD# signals that lead, lag, or are synchronized. To avoid this phenomenon, a secondary fixed propagation delay (tFD_ON1) is added to ensure there is always a minimum delay between low-side MOSFET off to high-side MOSFET on. Low-Side MOSFET Off to High-Side MOSFET On Dead Time in CCM2 As noted in the CCM2 Operation section, the low-side driver strength is scale-able upon detection of CCM2. CCM2 feature slows the charge and discharge of the low-side MOSFET gate to minimize peak switching voltage overshoots during low-side MOSFET hard- switching (negative inductor current). To avoid cross- conduction, the slowing of the low-side gate also requires an adjustment (increase) of the dead time between low-side MOSFET off to high-side MOSFET on. A fairly long fixed dead time (tFD_ON2) is implemented to ensure there is no cross conduction during this CCM2 operation. High-Side MOSFET Off to Low-Side MOSFET On Dead Time in CCM1 / DCM To get very short dead time during high-side MOSFET off to low-side MOSFET on transition, a fixed-dead-time method is implemented in the SPS gate driver. The fixed-dead-time circuitry monitors the internal HS signal and adds a fixed delay long enough to gate on GL after a desired tD_DEADOFF (~ 5 ns, tD_DEADOFF = tFD_OFF1), regardless of SW node state. Exiting 3-State Condition When exiting a valid 3-state condition, the gate driver of the FDMF5821 follows the PWM input command. If the PWM input goes from 3-state to LOW, the low-side MOSFET is turned on. If the PWM input goes from 3- state to HIGH, the high-side MOSFET is turned on. This is illustrated in Figure 29 below. Inductor Current PWM SW GL GH to SW VIH_PWM VIL_PWM VTRI_HI VTRI_LO VIH_PWM 3-State Window VTRI_HI VTRI_LO VIH_PWM VTRI_HI VIL_PWM VIL_PWM 10% 90% 10% 10% 90% 90% 10% 10% 90% 10% 10% tPD_PHGLL tD_DEADON tPD_PLGHL tD_DEADOFF tPD_PHGLL tD_DEADON2 tD_HOLD-OFF tPD_THGHH tPD_TLGLH Less than tD_HOLD-OFF Less than tD_HOLD-OFF 3-State tHOLD_OFF Window 3-State tHOLD_OFF Window GL / GH off GL / GH off tD_HOLD-OFF NOTES: tPD_XXX = propagation delay from external signal (PWM, ZCD#, etc.) to IC generated signal. Example : tPD_PHGLL – PWM going HIGH to low-side MOSFET VGS (GL) going LOW tD_XXX = delay from IC generated signal to IC generated signal. Example : tD_DEADON – low-side MOSFET VGS LOW to high-side MOSFET VGS HIGH PWM tPD_PHGLL = PWM rise to LS VGS fall, VIH_PWM to 90% LS VGS tPD_PLGHL = PWM fall to HS VGS fall, VIL_PWM to 90% HS VGS tPD_PHGHH = PWM rise to HS VGS rise, VIH_PWM to 10% HS VGS (ZCD# held LOW) Exiting 3-State tPD_TSGHH = PWM 3-State to HIGH to HS VGS rise, VIH_PWM to 10% HS VGS tPD_TSGLH = PWM 3-State to LOW to LS VGS rise, VIL_PWM to 10% LS VGS ZCD# tPD_ZLGLL = ZCD# fall to LS VGS fall, VIL_ZCD# to 90% LS VGS tPD_ZHGLH = ZCD# rise to LS VGS rise, VIH_ZCD# to 10% LS VGS Dead Times tD_DEADON = LS VGS fall to HS VGS rise, LS-Comp trip value to 10% HS VGS tD_DEADOFF = SW fall to LS VGS rise, SW-Comp trip value to 10% LS VGS Figure 29. PWM HIGH / LOW / 3-State Timing Diagram |
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