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FDMF5821 датащи(PDF) 5 Page - ON Semiconductor

номер детали FDMF5821
подробное описание детали  Smart Power Stage (SPS) Module with Integrated Temperature Monitor
PDF  26 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMF5821 датащи(HTML) 5 Page - ON Semiconductor

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© 2016 Semiconductor Components Industries, LLC
www.onsemi.com
FDMF5821 • Rev. 1.0
4
Absolute Maximum Ratings
Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = TJ = 25°C
Symbol
Parameter
Min.
Max.
Unit
VCC
Supply Voltage
Referenced to AGND
-0.3
6.0
V
PVCC
Drive Voltage
Referenced to AGND
-0.3
6.0
V
VEN/FAULT#
Output Enable / Disable
Referenced to AGND
-0.3
6.0
V
VPWM
PWM Signal Input
Referenced to AGND
-0.3
6.0
V
VZCD#
ZCD Mode Input
Referenced to AGND
-0.3
6.0
V
VGL
Low Gate Manufacturing Test Pin
Referenced to AGND (DC only)
-0.3
6.0
V
Referenced to AGND, AC<20 nS
-3.0
6.0
VTMON
Thermal Monitor
Referenced to AGND
-0.3
6.0
V
VIN
Power Input
Referenced to PGND, AGND
-0.3
25.0
V
VPHASE
PHASE
Referenced to PGND, AGND (DC Only)
-0.3
25.0
V
Referenced to PGND, AC < 20 ns
-7.0
30.0
VSW
Switch Node Input
Referenced to PGND, AGND (DC Only)
-0.3
25.0
V
Referenced to PGND, AC < 20 ns
-7.0
30.0
VBOOT
Bootstrap Supply
Referenced to AGND (DC Only)
-0.3
30.0
V
Referenced to AGND, AC < 20 ns
-5.0
35.0
VBOOT-PHASE Boot to PHASE Voltage
Referenced to PVCC
-0.3
6.0
V
IO(AV)
(3)
Output Current
fSW = 300 kHz, VIN=12 V, VOUT=1.8 V
60
A
fSW = 1 MHz, VIN=12 V, VOUT=1.8 V
55
IFAULT
EN / FAULT# Sink Current
-0.1
7.0
mA
θJ-A
Junction-to-Ambient Thermal Resistance
12.4
°C/W
θJ-PCB
Junction-to-PCB Thermal Resistance (under ON
’s SPS Thermal Board)
1.8
°C/W
TA
Ambient Temperature Range
-40
+125
°C
TJ
Maximum Junction Temperature
+150
°C
TSTG
Storage Temperature Range
-55
+150
°C
ESD
Electrostatic Discharge
Protection
Human Body Model, ANSI/ESDA/JEDEC
JS-001-2012
3000
V
Charged Device Model, JESD22-C101
2500
Note:
3.
IO(AV) is rated with testing ON’s SPS evaluation board at TA = 25°C with natural convection cooling. This rating is
limited by the peak SPS temperature, TJ = 150°C, and varies depending on operating conditions and PCB layout.
This rating may be changed with different application settings.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
Operating Conditions are specified to ensure optimal performance to the datasheet specifications. On does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Control Circuit Supply Voltage
4.5
5.0
5.5
V
PVCC
Gate Drive Circuit Supply Voltage
4.5
5.0
5.5
V
VIN
Output Stage Supply Voltage
4.5
(4)
12.0
16.0
(5)
V
TJ
Operating Junction Temperature
-40
+125
°C
Notes:
4.
3.0 V VIN is possible according to the application condition.
5.
Operating at high VIN can create excessive AC voltage overshoots on the SW-to-GND and BOOT-to-GND nodes during
MOSFET switching transient. For reliable SPS operation, SW to GND and BOOT to GND must remain at or below the Absolute
Maximum Ratings in the table above.



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