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QID4520002 датащи(PDF) 1 Page - Powerex Power Semiconductors

номер детали QID4520002
подробное описание детали  Dual IGBT
PDF  6 Pages
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производитель  POWEREX [Powerex Power Semiconductors]
домашняя страница  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

QID4520002 датащи(HTML) 1 Page - Powerex Power Semiconductors

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Dual IGBT
HVIGBT Module
200 Amperes/4500 Volts
1
11/14 Rev. 3
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID4520002 Preliminary
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
5.51
140.0
B
2.87
73.0
C
1.89
48.0
D
4.88±0.01
124.0±0.25
E
2.24±0.01
57.0±0.25
F
1.18
30.0
G
0.43
11.0
H
1.07
27.15
J
0.20
5.0
K
1.65
42.0
Description:
Powerex HVIGBTs feature highly
insulating housings that offer
enhanced protection by means of
greater creepage and strike clear-
ance distance for many demanding
applications like medium voltage
drives and auxiliary traction
applications.
Features:
-40 to 150°C Extended
Temperature Range
100% Dynamic Tested
100% Partial Discharge Tested
Advanced Mitsubishi R-Series
Chip Technology
Aluminum Nitride (AlN) Ceramic
Substrate for Low Thermal
Impedance
Complementary Line-up in
Expanding Current Ranges to
Mitsubishi HVIGBT Power
Modules
Copper Baseplate
Creepage and Clearance Meet
IEC 60077-1
Rugged SWSOA and RRSOA
Applications:
High Voltage Power Supplies
Medium Voltage Drives
Motor Drives
Traction
Dimensions
Inches
Millimeters
L
0.69±0.01
17.5±0.25
M
0.38
9.75
N
0.20
5.0
P
0.22
5.5
Q
1.44
36.5
R
0.16
4.0
S
M6 Metric
M6
T
0.63 Min.
16.0 Min.
U
0.11 x 0.02
2.8 x 0.5
V
0.28 Dia.
7.0 Dia.
3
2
1
N
J (2TYP)
S NUTS
(3TYP)
H
H
V (4TYP)
M
G (3TYP)
R (DEEP)
E
B
K
(3TYP)
L
(2TYP)
P
U (5TYP)
T (SCREWING
DEPTH)
Q
1
2
3
4
5
6
7
8
F
F
D
A
C


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