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LTC4007 датащи(PDF) 14 Page - Linear Technology |
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LTC4007 датащи(HTML) 14 Page - Linear Technology |
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14 / 20 page ![]() 14 LTC4007 4007i Highest possible voltage rating on the capacitor will mini- mize problems. Consult with the manufacturer before use. Alternatives include new high capacity ceramic (at least 20 µF) from Tokin, United Chemi-Con/Marcon, et al. Other alternative capacitors include OS-CON capacitors from Sanyo. The output capacitor (C3) is also assumed to absorb output switching current ripple. The general formula for capacitor current is: I V V V Lf RMS BAT BAT DCIN = () ()( ) 029 1 1 .– For example: VDCIN = 19V, VBAT = 12.6V, L1 = 10µH, and f = 300kHz, IRMS = 0.41A. EMI considerations usually make it desirable to minimize ripple current in the battery leads, and beads or inductors may be added to increase battery impedance at the 300kHz switching frequency. Switching ripple current splits be- tween the battery and the output capacitor depending on the ESR of the output capacitor and the battery imped- ance. If the ESR of C3 is 0.2 Ω and the battery impedance is raised to 4 Ω with a bead or inductor, only 5% of the current ripple will flow in the battery. Inductor Selection Higher operating frequencies allow the use of smaller inductor and capacitor values. A higher frequency gener- ally results in lower efficiency because of MOSFET gate charge losses. In addition, the effect of inductor value on ripple current and low current operation must also be considered. The inductor ripple current ∆IL decreases with higher frequency and increases with higher VIN. ∆= ()( ) I fL V V V L OUT OUT IN 1 1– Accepting larger values of ∆IL allows the use of low inductances, but results in higher output voltage ripple and greater core losses. A reasonable starting point for setting ripple current is ∆IL = 0.4(IMAX). In no case should ∆IL exceed 0.6(IMAX) due to limits imposed by IREV and CA1. Remember the maximum ∆IL occurs at the maxi- mum input voltage. In practice 10 µH is the lowest value recommended for use. Lower charger currents generally call for larger inductor values. Use Table 4 as a guide for selecting the correct inductor value for your application. Table 4 MAX AVERAGE MINIMUM INDUCTOR CURRENT (A) INPUT VOLTAGE (V) VALUE ( µH) 1 ≤20 40 ±20% 1>20 56 ±20% 2 ≤20 20 ±20% 2>20 30 ±20% 3 ≤20 15 ±20% 3>20 20 ±20% 4 ≤20 10 ±20% 4>20 15 ±20% Charger Switching Power MOSFET and Diode Selection Two external power MOSFETs must be selected for use with the charger: a P-channel MOSFET for the top (main) switch and an N-channel MOSFET for the bottom (syn- chronous) switch. The peak-to-peak gate drive levels are set internally. This voltage is typically 6V. Consequently, logic-level threshold MOSFETs must be used. Pay close attention to the BVDSS specification for the MOSFETs as well; many of the logic level MOSFETs are limited to 30V or less. Selection criteria for the power MOSFETs include the “ON” resistance RDS(ON), total gate capacitance QG, reverse transfer capacitance CRSS, input voltage and maximum output current. The charger is operating in continuous mode at moderate to high currents so the duty cycles for the top and bottom MOSFETs are given by: Main Switch Duty Cycle = VOUT/VIN Synchronous Switch Duty Cycle = (VIN – VOUT)/VIN. APPLICATIO S I FOR ATIO |
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