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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TSM085P03CS датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM085P03CS датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page  TSM085P03CS Taiwan Semiconductor 1 Version: A1703 P-Channel Power MOSFET -30V, -34A, 8.5m Ω FEATURES ● Low R DS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and R g tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC-DC Converters ● Battery Power Management ● Load Switch ● BLDC Motor Drives KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS -30 V RDS(on) (max) VGS = -10V 8.5 m Ω VGS = -4.5V 14 Qg 28 nC SOP-8 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 1) TC = 25°C ID -34 A TA = 25°C -13 Pulsed Drain Current IDM -136 A Single Pulse Avalanche Current (Note 2) IAS -23 A Single Pulse Avalanche Energy (Note 2) EAS 79 mJ Total Power Dissipation TC = 25°C PD 14 W TC = 125°C 2.8 Total Power Dissipation TA = 25°C PD 2.2 W TA = 125°C 0.4 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 9 °C/W Junction to Ambient Thermal Resistance RӨJA 57 °C/W Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. |
Аналогичный номер детали - TSM085P03CS |
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Аналогичное описание - TSM085P03CS |
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