TSM085P03CS datasheet(2/6 Pages) TSC

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TSM085P03CS

Taiwan Semiconductor

Version: A1703

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250µA

BVDSS

-30

Gate Threshold Voltage

VGS = VDS, ID = -250µA

VGS(TH)

-1.2

-1.5

-2.5

Gate-Source Leakage Current

VGS = ±20V, VDS = 0V

IGSS

±100

Drain-Source Leakage Current

VGS = 0V, VDS = -30V

IDSS

-1

µA

VGS = 0V, VDS = -30V

TJ = 125°C

-100

Drain-Source On-State Resistance

(Note 3)

VGS = -10V, ID = -13A

RDS(on)

7.7

8.5

VGS = -4.5V, ID = -10A

Forward Transconductance

(Note 3)

VDS = -5V, ID = -13A

gfs

Dynamic

(Note 4)

Total Gate Charge

VGS = -10V,

VDS = -15V, ID = -13A

Total Gate Charge

VGS = -4.5V,

VDS = -15V, ID = -10A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance

VGS = 0V, VDS = -15V

f = 1.0MHz

Ciss

3216

Output Capacitance

Coss

409

Reverse Transfer Capacitance

Crss

277

Gate Resistance

f = 1.0MHz

1.8

Switching

(Note 4)

Turn-On Delay Time

VGS = -10V, VDS = -15V,

ID = -13A, RG = 2Ω

td(on)

7.2

Turn-On Rise Time

2.6

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Source-Drain Diode

Forward Voltage

(Note 3)

VGS = 0V, IS = -13A

VSD

-1

Reverse Recovery Time

IS = -13A ,

dI/dt = 100A/

μs

trr

Reverse Recovery Charge

Qrr

Notes:

Silicon limited current only.

L = 0.3mH, VGS = -10V, VDD = -25V, RG = 25Ω, IAS = -23A, Starting TJ = 25°C

Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.

Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM085P03CS RLG

SOP-8

2,500pcs / 13

” Reel

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