NE68719 pdf, NE68719 подробное описание детали, NE68719 датащи, NE68719 view ::: ALLDATASHEET :::

номер детали	NE68719

подробное описание детали	NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION FOR LOW-NOISE MICROWAVE AMPLIFICATION

объем файла	189.69 Kbytes

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производитель	CEL [California Eastern Labs]

домашняя страница	http://www.cel.com

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Аналогичный номер детали - NE68719

производитель	номер детали	датащи	подробное описание детали
NEC	NE68719	196Kb / 21P	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NEC	NE68719-T1	196Kb / 21P	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Labs	NE68719-T1-A	314Kb / 22P	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

производитель	номер детали	датащи	подробное описание детали
NEC	2SC3587	91Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	2SC3603	89Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	2SC3604	94Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	2SC5177	56Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5180	54Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5185	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5369	72Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION
New Jersey Semi-Conduct...	2SC3604	198Kb / 2P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
California Eastern Labs	2SC3356	1Mb / 9P	NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
eleflow technologies co...	2SC3603	222Kb / 4P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION