2SC5408-T1 pdf, 2SC5408-T1 подробное описание детали, 2SC5408-T1 датащи, 2SC5408-T1 view ::: ALLDATASHEET :::

номер детали	2SC5408-T1

подробное описание детали	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

объем файла	50.84 Kbytes

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производитель	NEC [NEC]

домашняя страница	http://www.nec.com/

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Аналогичный номер детали - 2SC5408-T1

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SC5404	227Kb / 5P	NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
Savantic, Inc.	2SC5404	243Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC5404	154Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SC5404	130Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	2SC5404	245Kb / 3P	Silicon NPN Power Transistors

производитель	номер детали	датащи	подробное описание детали
NEC	2SC3587	91Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	2SC3603	89Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	2SC3604	94Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	2SC5369	72Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION
	2SC5409	39Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
	NE698M01	60Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION
	NE699M01	50Kb / 6P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
New Jersey Semi-Conduct...	2SC3604	198Kb / 2P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
California Eastern Labs	NE68719	189Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION FOR LOW-NOISE MICROWAVE AMPLIFICATION
eleflow technologies co...	2SC3603	222Kb / 4P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION