NESG4030M14-T3 pdf, NESG4030M14-T3 подробное описание детали, NESG4030M14-T3 датащи, NESG4030M14-T3 view ::: ALLDATASHEET :::

номер детали	NESG4030M14-T3

подробное описание детали	NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)

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производитель	NEC [NEC]

домашняя страница	http://www.nec.com/

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Аналогичный номер детали - NESG4030M14-T3

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	NESG4030M14-T3	327Kb / 12P	NPN SILICON GERMANIUM C RF TRANSISTOR 2009
Renesas Technology Corp	NESG4030M14-T3-A	327Kb / 12P	NPN SILICON GERMANIUM C RF TRANSISTOR 2009

производитель	номер детали	датащи	подробное описание детали
NEC	2SC5787	100Kb / 22P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
	2SC5746	100Kb / 22P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
	NESG2021M16	120Kb / 12P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
	NESG2031M16	119Kb / 12P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
	NESG2101M16	135Kb / 13P	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
	2SC5606	73Kb / 7P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
California Eastern Labs	NESG3031M05-T1-A	673Kb / 9P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
	NESG2021M16	861Kb / 11P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
	NE66219	329Kb / 6P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
	NESG210719	1Mb / 9P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)