GT30J122 pdf, GT30J122 подробное описание детали, GT30J122 датащи, GT30J122 view ::: ALLDATASHEET :::

номер детали	GT30J122

подробное описание детали	4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING

объем файла	498.44 Kbytes

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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Аналогичный номер детали - GT30J122

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	GT30J122	1Mb / 73P	Bipolar Small-Signal Transistors
Toshiba Semiconductor	GT30J122A	199Kb / 7P	Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	GT30J322	257Kb / 5P	N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
Mitsubishi Electric Sem...	PS22056	119Kb / 9P	1200V/25A low-loss 4th generation IGBT inverter bridge
Toshiba Semiconductor	GT40Q323	150Kb / 6P	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
	GT40T301	166Kb / 6P	Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications
	GT60M323	168Kb / 6P	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
	GT60N322	166Kb / 6P	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
	GT50J122	160Kb / 6P	Current Resonance Inverter Switching Application
	GT60J323H	182Kb / 6P	Current Resonance Inverter Switching Application
	GT35J321	290Kb / 6P	Fourth-generation IGBT Current Resonance Inverter Switching Applications
	GT50J328	232Kb / 6P	Current Resonance Inverter Switching Application Fourth Generation IGBT