| производитель | номер детали | датащи | подробное описание детали |
 Toshiba Semiconductor |
GT30J322
|
257Kb / 5P |
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
|
|
GT30J122
|
498Kb / 6P |
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
|
|
GT40T301
|
166Kb / 6P |
Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications
|
|
GT50J322
|
614Kb / 6P |
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT
|
|
GT50J122
|
160Kb / 6P |
Current Resonance Inverter Switching Application
|
|
GT60J323H
|
182Kb / 6P |
Current Resonance Inverter Switching Application
|
|
GT50J328
|
232Kb / 6P |
Current Resonance Inverter Switching Application Fourth Generation IGBT
|
 Integrated Device Techn... |
IDT8V19N476-01I
|
51Kb / 2P |
Fourth generation FemtoClock
|
|
841N4830
|
687Kb / 28P |
Fourth generation FemtoClock
|
|
IDT8N3SV75
|
384Kb / 19P |
Fourth generation FemtoClock
|