| производитель | номер детали | датащи | подробное описание детали |
 Intersil Corporation |
MCTV35P60F1D
|
53Kb / 5P |
35A, 600V P-Type MOS Controlled Thyristor (MCT) with Anti-Parallel Diode
April 1999 |
 IXYS Corporation |
IXGR60N60C3C1
|
199Kb / 6P |
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
|
|
IXGH48N60C3C1
|
191Kb / 6P |
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
|
|
IXGH48N60B3C1
|
193Kb / 6P |
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
|
|
IXGH36N60B3C1
|
186Kb / 6P |
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
|
|
IXGA30N60C3C1
|
294Kb / 7P |
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
|
|
MMIX1H60N150V1
|
207Kb / 5P |
1500V MOS Gated Thyristor w/ Anti-Parallel Diode
|
|
MMJX1H40N150
|
252Kb / 5P |
1500V MOS Gated Thyristor
|
|
IXHH40N150HV
|
181Kb / 4P |
1500V MOS Gated Thyristor
|
 Nell Semiconductor Co.,... |
NK100KQ
|
825Kb / 5P |
Anti-parallel Thyristor Module
|