PTFB093608FV pdf, PTFB093608FV подробное описание детали, PTFB093608FV датащи, PTFB093608FV view ::: ALLDATASHEET :::

номер детали	PTFB093608FV

подробное описание детали	Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 ??960 MHz

объем файла	1116.02 Kbytes

Html View	1 2 3 4 5 6 7 8 9 Next

производитель	CREE [Cree, Inc]

домашняя страница	http://www.cree.com/

Logo

Аналогичный номер детали - PTFB093608FV

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	PTFB093608FV	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET Rev. 04, 2012-07-24
	PTFB093608FVV2	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET Rev. 04, 2012-07-24
	PTFB093608FVV2R250	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET Rev. 04, 2012-07-24
	PTFB093608FVV2R250XTMA1	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET Rev. 04, 2012-07-24
	PTFB093608FVV2XWSA1	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET Rev. 04, 2012-07-24

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	PTFA091503EL	627Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 920-960 MHz Rev. 03, 2010-08-11
	PTFB091507FH	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz Rev. 03, 2011-03-14
	PTFB090901EA	226Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz Rev. 04, 2012-02-23
	PTFB091802FC	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz Rev. 02.1, 2016-06-10
	PTFB091507FH	1,015Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz Rev. 03.1, 2016-06-09
	PTFA091503EL	766Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 ??960 MHz Rev. 04, 2016-06-16
Cree, Inc	PTFB090901EA	710Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 ??960 MHz
	PTFB091507FH	618Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz
	PTFB091802FC	538Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz
WOLFSPEED, INC.	PTRA097008NB	556Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz Rev. 04, 2023-06-22