PTFB091802FC датащи(PDF) - Cree, Inc

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PTFB091802FC датащи (PDF) - Cree, Inc

PTFB091802FC Datasheet PDF - Cree, Inc


номер детали	PTFB091802FC

скачать	PTFB091802FC скачать

объем файла	538.97 Kbytes

Page	9 Pages

производитель	CREE [Cree, Inc]

домашняя страница	http://www.cree.com/

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подробное описание детали

Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz

PTFB091802FC Datasheet (PDF)

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PTFB091802FC Datasheet PDF - Cree, Inc


номер детали	PTFB091802FC

скачать	PTFB091802FC Click to download

объем файла	538.97 Kbytes

Page	9 Pages

производитель	CREE [Cree, Inc]

домашняя страница	http://www.cree.com/

Logo

подробное описание детали	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz

PTFB091802FC датащи (HTML) - Cree, Inc

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PTFB091802FC Datasheet HTML 9Page - Cree, Inc

Аналогичный номер детали - PTFB091802FC

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	PTFB091802FC	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02, 2015-03-27
	PTFB091802FC	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz Rev. 02.1, 2016-06-10
	PTFB091802FCV1R0	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz Rev. 02.1, 2016-06-10
	PTFB091802FCV1R0XTMA1	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz Rev. 02.1, 2016-06-10
	PTFB091802FCV1R250	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz Rev. 02.1, 2016-06-10

Аналогичное описание - PTFB091802FC

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	PTFA091503EL	627Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 920-960 MHz Rev. 03, 2010-08-11
	PTFB091507FH	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz Rev. 03, 2011-03-14
	PTFB090901EA	226Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz Rev. 04, 2012-02-23
	PTFB091802FC	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz Rev. 02.1, 2016-06-10
	PTFB091507FH	1,015Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz Rev. 03.1, 2016-06-09
	PTFA091503EL	766Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 ??960 MHz Rev. 04, 2016-06-16
Cree, Inc	PTFB090901EA	710Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 ??960 MHz
	PTFB091507FH	618Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz
	PTFB093608FV	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 ??960 MHz
WOLFSPEED, INC.	PTRA097008NB	556Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz Rev. 04, 2023-06-22

О Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Эта информация предназначена только для общих информационных целей, мы не несем ответственности за любые убытки или ущерб, вызванные вышеуказанной информацией.

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