DESCRIPTION
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.

FEATURES
• Typical 2-tone performance at a supply voltage of 26 V
   and IDQ of 85 mA:
   – Output power = 10 W (PEP)
   – Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz
   – Efficiency = 39% at 900 MHz, 34% at 2200 MHz
   – dim = −31 dBc at 900 MHz, −28 dBc at 2200 MHz
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (HF to 2200 MHz)
• No internal matching for broadband operation.

APPLICATIONS
• RF power amplifiers for GSM, EDGE, CDMA and
   W-CDMA base stations and multicarrier applications in
   the HF to 2200 MHz frequency range
• Broadcast drivers.