DESCRIPTION
90 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz.

FEATURES
• Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA:
   – Output power = 90 W (PEP)
   – Gain = 12 dB
   – Efficiency = 32%
   – dim = −26 dBc
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (1800 to 2000 MHz)
• Internally matched for ease of use.

APPLICATIONS
• RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.