| производитель | номер детали | датащи | подробное описание детали |
Infineon Technologies A... |
PTF180101
|
310Kb / 10P |
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
2004-02-03 |
|
PTF180601
|
233Kb / 11P |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
2004-05-03 |
|
PTF211301
|
449Kb / 9P |
LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
2004-01-02 |
TriQuint Semiconductor |
AGR18060E
|
426Kb / 9P |
60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor
|
Infineon Technologies A... |
PTFA181001E
|
408Kb / 11P |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ??1880 MHz
Rev. 02.1, 2009-02-20 |
|
PTF180101S
|
209Kb / 10P |
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
Rev. P03, 2007-03-01 |
|
PTFA182001E
|
260Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz
Rev. 01, 2008-03-12 |
|
PTFB183404E
|
727Kb / 18P |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz
Rev. 04, 2010-11-17 |
|
PTFB183404E
|
911Kb / 18P |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz
Rev. 04.1, 2016-06-10 |
Cree, Inc |
PTFB183404E
|
649Kb / 18P |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz
|
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