The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon photodarlington detectors. The chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments.
They are best suited for use in applications susceptible to high EMI levels.

• No Base Connection for Improved Noise Immunity
• High Collector–Emitter Breakdown Voltage — 80 Volts Minimum
• Higher Sensitivity to Low Input Drive Current
• To order devices that are tested and marked per VDE 0884 requirements, the
   suffix ”V” must be included at end of part number. VDE 0884 is a test option.

Applications
• Appliances, Measuring Instruments
• I/O Interfaces for Computers
• Programmable Controllers
• Portable Electronics
• Interfacing and coupling systems of different potentials and impedance
• Solid State Relays