The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applications requiring high output current (IC) at low LED input currents (IF).

• High Sensitivity to Low Input Drive Current (IF = 1 mA)
• To order devices that are tested and marked per VDE 0884 requirements, the
   suffix ”V” must be included at end of part number. VDE 0884 is a test option.

Applications
• Appliances, Measuring Instruments
• I/O Interfaces for Computers
• Programmable Controllers
• Interfacing and coupling systems of different potentials and impedances
• Solid State Relays
• Portable Electronics