| производитель | номер детали | датащи | подробное описание детали |
 Toshiba Semiconductor |
GT30J322
|
257Kb / 5P |
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
|
|
GT50J327
|
159Kb / 6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
|
|
GT30J122
|
498Kb / 6P |
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
|
|
GT15J331
|
222Kb / 7P |
Silicon N Channel IGBT High Power Switching Applications
|
|
GT15Q102
|
189Kb / 6P |
Silicon N Channel IGBT High Power Switching Applications
|
|
GT40Q321
|
157Kb / 6P |
Silicon N Channel IEGT Voltage Resonance Inverter Switching Application
|
|
GT40Q323
|
150Kb / 6P |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
|
GT60M323
|
168Kb / 6P |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
|
GT60N322
|
166Kb / 6P |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
|
GT35J321
|
290Kb / 6P |
Fourth-generation IGBT Current Resonance Inverter Switching Applications
|