| производитель | номер детали | датащи | подробное описание детали |
 STMicroelectronics |
SCT040H65G3SAG
|
227Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 40 m typ., 30 A in an H2PAK-7 straight leads package
14-Feb-2022 |
|
SCTH35N65G2V-7AG
|
620Kb / 15P |
Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
24-Jan-2020 |
|
SCTW100N65G2AG
|
423Kb / 11P |
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package
21-Nov-2018 |
|
SCTW100N120G2AG
|
217Kb / 11P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package
23-Jul-2020 |
|
SCTW35N65G2VAG
|
206Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
09-Sep-2020 |
|
SCT018H65G3AG
|
390Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package
07-Oct-2022 |
|
SCT040H120G3AG
|
386Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
14-Oct-2022 |
|
SCT040H65G3AG
|
389Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package
21-Jan-2022 |
|
SCT070H120G3AG
|
396Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package
04-Apr-2023 |
|
SCTHS250N65G3
|
301Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 207 A in a STPAK package
05-Oct-2022 |