Features
• Infineon 45-nm MIRRORBIT™ technology that stores two data bits in each memory array cell
• Sector architecture options
- Uniform: Address space consists of all 256KB sectors
- Hybrid:
• Configuration 1 - Address space consists of thirty-two 4 KB sectors grouped either on the top or the bottom
while the remaining sectors are all 256KB
• Configuration 2 - Address space consists of thirty-two 4 KB sectors equally split between top and bottom
while the remaining sectors are all 256KB
• Page programming buffer of 256 or 512 bytes
• OTP secure silicon array of 1024 bytes (32  32 bytes)
• Octal interface (8S-8S-8S, 8D-8D-8D)
- JEDEC eXpanded serial peripheral interface (SPI) (JESD251) compliant
- SDR option runs up to 200-MBps (200 MHz clock speed)
- DDR option runs up to 400-MBps (200 MHz clock speed)
- Supports data strobe (DS) to simplify the read data capture in high-speed systems
• Functional safety features
- Functional safety ISO26262 ASIL B compliant and ASIL D ready
- Infineon Endurance Flex architecture provides high-endurance and long retention partitions
- Interface CRC detects errors on communication interface between host controller and SEMPER™ Flash device
- Data integrity CRC detects errors in memory array
- SafeBoot reports device initialization failures, detects configuration corruption and provides recovery options
- Built-in error correcting code (ECC) corrects single-bit error and detects double-bit error (SECDED) on memory
array data
- Sector erase status indicator for power loss during erase
• Protection features
- Legacy block protection (LBP) for memory array and device configuration
- Advanced sector protection (ASP) for individual memory array sector based protection
• AutoBoot enables immediate access to the memory array following power-on
• Hardware reset through CS# signaling method (JEDEC) OR individual RESET# pin
• Serial flash discoverable parameters (SFDP) describing device functions and features
• Device identification, manufacturer identification and unique identification
• Data integrity
- 512 Mb devices
• Min. 1,280,000 program-erase cycles for the main array
- 1 Gb devices
• Min. 2,560,000 program-erase cycles for the main array
- All devices
• Min. 300,000 program-erase cycles for the 4 KB sectors
• Minimum 25 years data retention
• Supply voltage
- 1.7 V to 2.0 V (HS-T)
- 2.7 V to 3.6 V (HL-T)
• Grade / temperature range
- Industrial (–40°C to +85°C)
- Industrial plus (–40°C to +105°C)
- Automotive AEC-Q100 grade 3 (–40°C to +85°C)
- Automotive AEC-Q100 grade 2 (–40°C to +105°C)
- Automotive AEC-Q100 grade 1 (–40°C to +125°C)
• Packages
- 512 Mb: 24-ball BGA 6  8 mm
- 1Gb: 24-ball BGA 8  8 mm