Description
Cree’s CGHV40180P is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGHV40180P, operating
from a 50 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs
offer high efficiency, high gain and wide bandwidth capabilities
making the CGHV40180P ideal for linear and compressed
amplifier circuits. The transistor is available in a 2-lead pill
package.
Features
• Up to 2.0 GHz Operation
• 24 dB Small Signal Gain at 900 MHz
• 20 dB Power Gain at 900 MHz
• 250 W Typical Output Power at 900 MHz
• 75% Efficiency at PSAT
Applications
• Military Communications
• Public Safety VHF-UHF applications
• Radar
• Medical
• Broadband Amplifiers