Description
Wolfspeed’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT) designed specifically for high efficiency, high gain
and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE,
4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT
device is unmatched so it is suitable for power amplifier applications from
10 MHz through 6000 MHz, such as tactical communications, CATV, UAV data
links, as well as a driver stage amplifier for RADAR, EW, and SatCom devices.
At a VDD of 50 V, the device provide 2.5 W of average power or 15 W of peak
power. At a VDD of 28 V, the device provides 1 W of average power and 7 W
of peak power. The transistor is available in a 3 mm x 4 mm, surface mount,
dualflat-no-lead (DFN) package.
Features for 50 V in CGHV27015S-AMP1
• 2.4 - 2.7 GHz Operation
• 15 W Typical Output Power
• 21 dB Gain at 2.5 W PAVE
• -38 dBc ACLR at 2.5 W PAVE
• 32% efficiency at 2.5 W PAVE
• High degree of APD and DPD correction can be
applied