Description
Wolfspeed’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT) designed specifically for high efficiency, high gain and
wide bandwidth capabilities. The device can be deployed for L-, S-, C-, X- and
Ku-Band amplifier applications. The datasheet specifications are based on a
X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit
while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.
Under reduced power, the transistor can operate below 40V to as low as 20V VDD,
maintaining high gain and efficiency.
Features
• Up to 15 GHz Operation
• 25 W Typical Output Power
• 11 dB Gain at 9.4 GHz
• Application circuit for 8.9 - 9.6 GHz