Features
• Electrically screened to DLA SMD# 5962-12228
• Low input offset voltage. . . . . . . . . . . . . . ±110μV, maximum
• Superb offset temperature coefficient. . .1μV/°C, maximum
• Input bias current . . . . . . . . . . . . . . . . . . . . . .±5nA, maximum
• Input bias current TC . . . . . . . . . . . . . . . ±5pA/°C, maximum
• Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440μA
• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/√Hz
• Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 40V
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- SEB LETTH (VS = ±20V) . . . . . . . . . . . . . . 73.9MeV•cm2/mg
- Total dose, high dose rate. . . . . . . . . . . . . . . . . 300krad(Si)
- Total dose, low dose rate . . . . . . . . . . . . . . . . 100krad(Si)*
- SEL immune (SOI process)
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
Related Literature
For a full list of related documents, visit our website
• ISL70417SEH product page