Description
The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes
a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!J!gh speed and low power storage. The
TC518512PL operates from a single 5V power supply. Refreshing is supported by a refresh (OEIRFSH) input which enables two
types of refreshing - auto refresh and self refresh. The TC518512PL features a static RAM-like interface with a write cycle in which
the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface.
The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small outline
package (forward type, reverse type).

Features
• Organization: 524,288 words x 8 bits
• Single 5V power supply
• Data retention supply voltage: 3.0V - 5.5V
• Fast access time
TC518512PL-(DR) Family
-70 ·80 ·10
tCEA cr Access Time 70ns 80ns 100ns
toEA OE Access Time 30ns 30ns 40ns
tRC Cycle Time 11Sns 130ns 160ns
Power Dissipation 38SmW 330mW 27SmW
!S.SV 200!lA
Self Refresh Current !
3.0V 100!lA
• Auto refresh is supported by an internal refresh address
counter
• Self refresh is supported by an internal timer
• Inputs and outputs TIL compatible
• Refresh: 2048 refresh cycles/32ms
• Package
- TC518512PL: DIP32-P-600
- TC518512FL: SOP32-P-525
• TC518512FTL: TSOP32 -P-400
• TC518512TRL: TSOP32-P-400A