| производитель | номер детали | датащи | подробное описание детали |
Fairchild Semiconductor |
FDT86106LZ
|
360Kb / 6P |
N-Channel PowerTrench MOSFET 100 V, 3.2 A, 108 m Ohm
|
ON Semiconductor |
NTMFS002N10MCL
|
129Kb / 7P |
MOSFET - Power, Single N-Channel 100 V, 2.8 m, 175 A
October, 2021 ??Rev. 1 |
|
NTMTS002N10MC
|
320Kb / 8P |
MOSFET - Power, Single N-Channel 100 V, 2.3 m, 236 A
April, 2021 -Rev. 0 |
|
NTMTSC002N10MC
|
273Kb / 7P |
MOSFET - Power, Single N-Channel 100 V, 2.0 m, 236 A
September, 2021-Rev. 1 |
|
NTMTSC1D6N10MC
|
262Kb / 7P |
MOSFET - Power, Single N-Channel 100 V, 1.7 m, 267 A
September, 2021-Rev. 1 |
|
NTMYS4D1N06CL
|
333Kb / 7P |
MOSFET ??Power, Single, N-Channel 60 V, 4.0 m, 100 A
November, 2019-Rev. 1 |
|
NTTFS012N10MD
|
267Kb / 8P |
MOSFET ??Power, Single N-Channel 100 V, 14.4 m, 45 A
June, 2021 ??Rev. 1 |
|
NVMTS1D6N10MC
|
324Kb / 8P |
MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A
April, 2021 ??Rev. 0 |
|
NVMYS016N10MCL
|
228Kb / 6P |
MOSFET – Power, Single N-Channel 100 V, 14 m, 46 A
June, 2022 - Rev. 1 |
|
NVMYS005N10MCL
|
326Kb / 6P |
MOSFET – Power, Single N-Channel 100 V, 5.1 m, 108 A
June, 2022 - Rev. 1 |
Russian ▼ 
English
Chinese
German
Japanese
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
