| производитель | номер детали | датащи | подробное описание детали |
ON Semiconductor |
NTMTS002N10MC
|
320Kb / 8P |
MOSFET - Power, Single N-Channel 100 V, 2.3 m, 236 A
April, 2021 -Rev. 0 |
|
NTMTSC002N10MC
|
273Kb / 7P |
MOSFET - Power, Single N-Channel 100 V, 2.0 m, 236 A
September, 2021-Rev. 1 |
|
NTMTSC1D6N10MC
|
262Kb / 7P |
MOSFET - Power, Single N-Channel 100 V, 1.7 m, 267 A
September, 2021-Rev. 1 |
|
NTMYS2D9N04CL
|
341Kb / 7P |
MOSFET ??Power, Single, N-Channel 40 V, 2.8 m, 110 A
June, 2019-Rev. 1 |
|
NVCR4LS2D8N08M7A
|
149Kb / 6P |
MOSFET ??Power, N-Channel 80 V, 2.8 m
February, 2022 ??Rev. 0 |
|
NVMFS6H801N
|
210Kb / 7P |
MOSFET ??Power, Single, N-Channel 80 V, 2.8 m, 157 A
August, 2020 ??Rev. 3 |
|
NVMYS2D9N04CL
|
340Kb / 7P |
MOSFET ??Power, Single N-Channel 40 V, 2.8 m, 110 A
July, 2019 ??Rev. 1 |
|
NVMYS016N10MCL
|
228Kb / 6P |
MOSFET – Power, Single N-Channel 100 V, 14 m, 46 A
June, 2022 - Rev. 1 |
|
NVMFWS002N10MCL
|
159Kb / 7P |
MOSFET - Power, Single N-Channel 100 V, 2.8 m, 177 A
October, 2021 - Rev. 0 |
|
NVMJST2D6N08H
|
316Kb / 7P |
MOSFET – Power, Single N-Channel 80 V, 2.8 m, 131.5 A
October, 2022 - Rev. 0 |
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