| производитель | номер детали | датащи | подробное описание детали |
 Micron Technology |
MT49H8M32
|
652Kb / 43P |
REDUCED LATENCY DRAM RLDRAM
|
 Infineon Technologies A... |
HYB18RL25632AC
|
941Kb / 37P |
256 Mbit DDR Reduced Latency DRAM
V1.60 July 2003 |
 Samsung semiconductor |
K4C89183AF
|
1Mb / 55P |
288Mb x18 Network-DRAM2 Specification
|
 Micron Technology |
MT49H16M18C
|
1Mb / 44P |
288Mb SIO REDUCED LATENCY(RLDRAM II)
|
 Zilog, Inc. |
Z8036
|
3Mb / 79P |
Z-CIO AND CIO COUNTER / TIMER AND PARALLRL I/O UNIT
|
 Micron Technology |
MT49H32M9
|
2Mb / 76P |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
 GSI Technology |
GS4288C09
|
2Mb / 62P |
32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II
|
|
GS4576C09
|
2Mb / 62P |
64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM (LLDRAM II)
|
|
GS4576C36GL-25I
|
2Mb / 63P |
576Mb CIO Low Latency DRAM (LLDRAM II)
|
|
GS82582D38GE-400
|
453Kb / 27P |
288Mb SigmaQuad-II 288Mb SigmaQuad-II
|