| производитель | номер детали | датащи | подробное описание детали |
 Samsung semiconductor |
K4C89183AF
|
1Mb / 55P |
288Mb x18 Network-DRAM2 Specification
|
 Micron Technology |
MT49H16M18C
|
1Mb / 44P |
288Mb SIO REDUCED LATENCY(RLDRAM II)
|
|
MT49H8M36
|
1Mb / 49P |
288Mb CIO Reduced Latency
|
 Cypress Semiconductor |
CY7C43646
|
640Kb / 39P |
1K/4K/16K x36/x18/x2 Tri Bus FIFO
|
 Integrated Silicon Solu... |
IS49NLC93200
|
622Kb / 34P |
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
|
|
IS49NLS93200
|
596Kb / 34P |
288Mb (x9, x18) Separate I/O RLDRAM 2 Memory
|
|
IS49NLC96400
|
629Kb / 34P |
576Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
|
|
IS49NLS96400
|
575Kb / 34P |
576Mb (x9, x18) Separate I/O RLDRAM??2 Memory
|
 Micron Technology |
MT44K32M18
|
6Mb / 111P |
576Mb: x18, x36 RLDRAM 3
|
 GSI Technology |
GS82582D38GE-400
|
453Kb / 27P |
288Mb SigmaQuad-II 288Mb SigmaQuad-II
|