| производитель | номер детали | датащи | подробное описание детали |

WOLFSPEED, INC.
|
CGHV14500 |
3Mb/20P |
500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Rev. 5.0, 2022-7-27 |
| PTVA120251EA |
787Kb/14P |
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Rev. 06, 2023-07-10 |
| PTVA120252MT |
553Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 – 1400 MHz Rev. 04.1, 2022-02-13 |
| PTGA090304MD |
1Mb/12P |
Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W, 48 V, 575 – 960 MHz Rev. 04.2, 2022-1-27 |
| CGHV31500F1 |
2Mb/26P |
2.7 – 3.1 GHz, 500 W GaN HEMT Rev. 1.1, 2023-04-24 |
| CMPA0060002F |
2Mb/10P |
2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Rev. 3.3, 2022-12-8 |
| CMPA0060025F |
4Mb/12P |
25 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Rev. 4.3, 2022-12-13 |
| CAB500M17HM3 |
1Mb/12P |
1700 V, 500 A, Silicon Carbide, Half-Bridge Module Rev. 01, FEBRUARY 2022 |
| CGH60015D |
980Kb/9P |
15 W, 6.0 GHz, GaN HEMT Die Rev. 4.2, 2022-12-1 |
| CG2H80015D |
1Mb/9P |
15 W, 8.0 GHz, GaN HEMT Die Rev. 2.0, 2022-7-27 |
| CGHV1F006S |
3Mb/22P |
6 W, DC - 15 GHz, 40 V, GaN HEMT Rev. 6.0, 2022-8-3 |
| CGHV1F025S |
2Mb/11P |
25 W, DC - 15 GHz, 40 V, GaN HEMT Rev. 4.7, 2022-12-2 |
| CGHV27015S |
1Mb/12P |
15 W, DC - 6.0 GHz, 50 V, GaN HEMT Rev. 4.0, 2022-8-3 |
| CMPA2735015D |
610Kb/9P |
15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Rev 1.2 March 2020 |
| CMPA2735015S |
689Kb/11P |
15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Rev 0.4 April 2020 |
| C4D15120H |
558Kb/9P |
4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode Rev. 2, January 2023 |
| C4D15120A |
1Mb/9P |
4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode Rev. 5, March 2023 |
| CGH35015 |
2Mb/12P |
15 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX Rev. 4.2, 2022-10-28 |
| CMPA2560025F |
999Kb/12P |
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Rev 3.1 April 2020 |
| CGH55030F1-P1 |
1Mb/13P |
30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Rev. 4.2, 2022-12-13 |