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Hello, Please ask a question about MEST2G-080-25 Datasheet
# Example questions:
➢ What is the maximum forward current that the mest2g-080-25 can handle?
➢ What is the typical junction temperature when mounted on a heat sink at a pin input of 3 ghz?
➢ At what frequency does the mest2g-080-25 exhibit an insertion loss of less than 0.35 db?
# MEST2G-080-25
## Pin Diode Switch Element
Rev. V1
Features
· High Power Handling: 80 W @ 2 GHz or Less
· Low Insertion Loss:
- <0.35 dB @ 2 GHz
- <0.60 dB @ 6 GHz
· Medium Isolation:
- >22 dB @ 2 GHz
- >14 dB @ 6 GHz
· RoHS Compliant
Description
A thermal to ground series diode switch element for reliable high power switching applications up to 80 watts, usable up to 10 GHz.
Electrical Specifications (T<sub>C</sub> = +25°C)
| Parameter | Test Conditions | Units | Min. | Typ. | Max. |
|---|---|---|---|---|---|
| Breakdown Voltage (VBR) | IR = 10 mA, single diode | V | 500 | — | — |
| Leakage Current (IR) | IF = 100 V, single diode | nA | — | 40 | 100 |
| Forward Voltage (VF) | IF = 100 mA, single diode | mV | — | 0.93 | 1.05 |
| Series Resistance (RS) | IF = 100 mA, single diode | Ω | — | 0.97 | — |
| Junction Capacitance (CJ) | VR = 50 V, 1 MHz, single diode | pF | — | 0.09 | — |
| Lifetime (t) | IF = 10 mA, IR = 6 mA, @ 50% | ns | — | 1550 | — |
| I-Region (w) | I-Layer, single diode | µm | — | 80 | — |
| Return Loss (RL) | IF = 100 mA, 2 GHz/6 GHz | dB | 27/13 | 31/16 | — |
| Insertion Loss (IL) | IF = 100 mA, 2 GHz/6 GHz | dB | — | 0.20/0.45 | 0.35/0.60 |
| Isolation (ISO) | VR = 10 V, 2 GHz/6 GHz | dB | 22/14 | 25/17 | — |
| Parameter | Absolute Maximum |
|---|---|
| Breakdown Voltage (VR) | 500 V |
| Forward Current (IF) | 200 mA |
| θ<sub>JC</sub> | 10°C/W |
| Junction Temperature (T<sub>J</sub>) | -40°C to +175°C |
| Storage Temperature (T<sub>STG</sub>) | -55°C to +150°C |
| Mounting Temperature (T<sub>MG</sub>) | +260°C (per JEDEC STD-J-20C) |
# MEST2G-080-25
## Pin Diode Switch Element
Rev. V1
Features
· High Power Handling: 80 W @ 2 GHz or Less
· Low Insertion Loss:
- <0.35 dB @ 2 GHz
- <0.60 dB @ 6 GHz
· Medium Isolation:
- >22 dB @ 2 GHz
- >14 dB @ 6 GHz
· RoHS Compliant
Description
A thermal to ground series diode switch element for reliable high power switching applications up to 80 watts, usable up to 10 GHz.
Electrical Specifications (T<sub>C</sub> = +25°C)
| Parameter | Test Conditions | Units | Min. | Typ. | Max. |
|---|---|---|---|---|---|
| Breakdown Voltage (VBR) | IR = 10 mA, single diode | V | 500 | — | — |
| Leakage Current (IR) | IF = 100 V, single diode | nA | — | 40 | 100 |
| Forward Voltage (VF) | IF = 100 mA, single diode | mV | — | 0.93 | 1.05 |
| Series Resistance (RS) | IF = 100 mA, single diode | Ω | — | 0.97 | — |
| Junction Capacitance (CJ) | VR = 50 V, 1 MHz, single diode | pF | — | 0.09 | — |
| Lifetime (t) | IF = 10 mA, IR = 6 mA, @ 50% | ns | — | 1550 | — |
| I-Region (w) | I-Layer, single diode | µm | — | 80 | — |
| Return Loss (RL) | IF = 100 mA, 2 GHz/6 GHz | dB | 27/13 | 31/16 | — |
| Insertion Loss (IL) | IF = 100 mA, 2 GHz/6 GHz | dB | — | 0.20/0.45 | 0.35/0.60 |
| Isolation (ISO) | VR = 10 V, 2 GHz/6 GHz | dB | 22/14 | 25/17 | — |
| Parameter | Absolute Maximum |
|---|---|
| Breakdown Voltage (VR) | 500 V |
| Forward Current (IF) | 200 mA |
| θ<sub>JC</sub> | 10°C/W |
| Junction Temperature (T<sub>J</sub>) | -40°C to +175°C |
| Storage Temperature (T<sub>STG</sub>) | -55°C to +150°C |
| Mounting Temperature (T<sub>MG</sub>) | +260°C (per JEDEC STD-J-20C) |
| Part No. | MEST2G-080-25 |
| Manufacturer | MA-COM |
| Size | 732 Kbytes |
| Pages | 4 pages |
| Description | Pin Diode Switch Element |
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