| производитель | номер детали | датащи | подробное описание детали |
STMicroelectronics |
VB525SP-E
|
297Kb/19P |
High voltage ignition coil driver power integrated circuit
27-Sep-2010 |
|
VB525SP-E
|
278Kb/19P |
High voltage ignition coil driver power integrated circuit
18-Sep-2013 |
|
VB525SP-E
|
1Mb/22P |
for car body applications
Oct-2013 |
VBsemi Electronics Co.,... |
VB5222
|
749Kb/10P |
N- and P-Channel V (D-S) MOSFET
|
|
VB5222
|
604Kb/10P |
N- and P-Channel V (D-S) MOSFET
|
|
VB5222
|
604Kb/10P |
N- and P-Channel V (D-S) MOSFET
|
STMicroelectronics |
VB526SP-E
|
298Kb/19P |
High voltage ignition coil driver power integrated circuit
27-Sep-2010 |
|
VB526SP-E
|
1Mb/22P |
for car body applications
Oct-2013 |
Extech Instruments Corp... |
VB500
|
176Kb/1P |
4-Channel Vibration Meter/Datalogger
|
New Jersey Semi-Conduct... |
VB50X
|
102Kb/1P |
These rectifiers offer high voltage ranges in minimum-sized
|
France Joint |
VB50X55X4
|
384Kb/5P |
STANDARD SHAFT SEALS
|
|
VB50X58X4
|
384Kb/5P |
STANDARD SHAFT SEALS
|
VBsemi Electronics Co.,... |
VB5322
|
930Kb/10P |
N- and P-Channel 30 V (D-S) MOSFET
|
|
VB5460
|
594Kb/10P |
N- and P-Channel 40V (D-S) MOSFET
|
|
VB5610N
|
800Kb/10P |
N- and P-Channel 60V (D-S) MOSFET
|
|
VB562K
|
765Kb/10P |
N- and P-Channel 60V (D-S) MOSFET
|
|
VB562K
|
814Kb/10P |
N- and P-Channel 60V (D-S) MOSFET
|
|
VB562K
|
814Kb/10P |
N- and P-Channel 60V (D-S) MOSFET
|
STMicroelectronics |
VB56G4A
|
1,021Kb/4P |
Automotive grade 1.5 megapixel backside illuminated global shutter image sensor
15-Apr-2022 |
France Joint |
VB5X9X2
|
384Kb/5P |
STANDARD SHAFT SEALS
|
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