| производитель | номер детали | датащи | подробное описание детали |
 Renesas Technology Corp |
UPD166019T1F-E1-AY
|
168Kb/18P |
Single P-Channel High-Side Intelligent Power Device
|
|
UPD166010
|
408Kb/27P |
MOS INTEGRATED CIRCUIT
2009 |
|
UPD166010T1F-E1-AY
|
408Kb/27P |
MOS INTEGRATED CIRCUIT
2009 |
|
UPD166011T1J
|
211Kb/28P |
INTELLIGENT POWER DEVICE
|
|
UPD166011T1J-E1-AY
|
211Kb/28P |
INTELLIGENT POWER DEVICE
|
|
UPD166013T1J
|
212Kb/28P |
INTELLIGENT POWER DEVICE
|
|
UPD166013T1J-E1-AY
|
212Kb/28P |
INTELLIGENT POWER DEVICE
|
|
UPD166015GR
|
133Kb/17P |
MOS INTEGRATED CIRCUIT
|
|
UPD166015GR-E1-AY
|
133Kb/17P |
MOS INTEGRATED CIRCUIT
|
|
UPD166015GR-E2-AY
|
133Kb/17P |
MOS INTEGRATED CIRCUIT
|
|
UPD166017T1F
|
188Kb/24P |
INTELLIGENT POWER DEVICE
|
 NEC |
UPD16601N
|
98Kb/13P |
MOS Integrated Circuit
|
|
UPD16601N-XXX
|
98Kb/13P |
MOS Integrated Circuit
|
 Renesas Technology Corp |
UPD166005
|
414Kb/17P |
MOS INTEGRATED CIRCUIT
2008 |
|
UPD166005GR-E1-AZ
|
414Kb/17P |
MOS INTEGRATED CIRCUIT
2008 |
|
UPD166005GR-E2-AZ
|
414Kb/17P |
MOS INTEGRATED CIRCUIT
2008 |
|
UPD166007
|
484Kb/26P |
MOS INTEGRATED CIRCUIT
2006 |
|
UPD166007T1F-E1-AY
|
484Kb/26P |
MOS INTEGRATED CIRCUIT
2006 |
|
UPD166009
|
397Kb/27P |
MOS INTEGRATED CIRCUIT
2009 |
|
UPD166009T1F-E1-AY
|
397Kb/27P |
MOS INTEGRATED CIRCUIT
2009 |