| производитель | номер детали | датащи | подробное описание детали |
SeCoS Halbleitertechnol... |
SID9971-S
|
399Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
|
SID9971
|
709Kb/4P |
N-Channel EnhancementMode PowerMos.FET
|
|
SID9960
|
688Kb/4P |
N-Channel Enhancement Mode Power Mos.FET
|
|
SID9435
|
671Kb/4P |
P-Channel Enhancement Mode Power Mos.FET
|
|
SID9435
|
672Kb/4P |
P-Channel Enhancement Mode Power Mos.FET
|
|
SID9575
|
825Kb/4P |
P-Channel Enhancement Mode Power MOSFET
|
|
SID9575
|
1Mb/4P |
P-Channel Enhancement Mode Power MOSFET
|
VBsemi Electronics Co.,... |
SID9575
|
938Kb/7P |
P-Channel 60-V (D-S) MOSFET
|
SeCoS Halbleitertechnol... |
SID9575
|
1Mb/4P |
P-Channel Enhancement Mode Power MOSFET
|
|
SID9575
|
1Mb/4P |
P-Channel Enhancement Elektronische Bauelemente Mode Power MOSFET
|
|
SID01L60
|
710Kb/4P |
N-Channel Enhancement Mode Power Mos.FET
|
|
SID01N60
|
828Kb/5P |
N-Channel Enhancement Mode Power Mos.FET
|
|
SID04N60-C
|
244Kb/3P |
N-Ch Enhancement Mode Power MOSFET
|
VBsemi Electronics Co.,... |
SID04N60SL
|
1Mb/9P |
N-Channel 650V (D-S) Power MOSFET
|
|
SID04N65SL
|
1Mb/9P |
N-Channel 650V (D-S) Power MOSFET
|
SeCoS Halbleitertechnol... |
SID05N10
|
2Mb/4P |
5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET
|
VBsemi Electronics Co.,... |
SID05N10
|
1Mb/9P |
N-Channel 100-V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
SID05N10
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
SeCoS Halbleitertechnol... |
SID05N10
|
2Mb/4P |
N-Channel Enhancement Mode Power MOSFET
|
Sanken electric |
SID1003
|
27Kb/1P |
5phi Round Infrared LED
|
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