| производитель | номер детали | датащи | подробное описание детали |
 GE Solid State |
RFP10P12
|
242Kb/4P |
P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
 Inchange Semiconductor ... |
RFP10P12
|
370Kb/2P |
isc P-Channel MOSFET Transistor
|
 Intersil Corporation |
RFP10P15
|
305Kb/5P |
-10A, -150V, 0.500 Ohm, P-Channel Power MOSFET
October 1999 |
 GE Solid State |
RFP10P15
|
242Kb/4P |
P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
 Inchange Semiconductor ... |
RFP10P15
|
370Kb/2P |
isc P-Channel MOSFET Transistor
|
 GE Solid State |
RFP10N12
|
211Kb/4P |
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
|
 New Jersey Semi-Conduct... |
RFP10N12
|
89Kb/2P |
N-Channel Enhancement-Mode Power Field-Effect Transistors
|
|
RFP10N12
|
89Kb/2P |
N-Channel Enhancement-Mode Power Field-Effect Transistors
|
 Inchange Semiconductor ... |
RFP10N12
|
371Kb/2P |
isc N-Channel MOSFET Transistor
|
 Intersil Corporation |
RFP10N15
|
40Kb/5P |
10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs
March 1999 |
 GE Solid State |
RFP10N15
|
211Kb/4P |
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
|
 New Jersey Semi-Conduct... |
RFP10N15
|
89Kb/2P |
N-Channel Enhancement-Mode Power Field-Effect Transistors
|
|
RFP10N15
|
89Kb/2P |
N-Channel Enhancement-Mode Power Field-Effect Transistors
|
 Inchange Semiconductor ... |
RFP10N15
|
371Kb/2P |
isc N-Channel MOSFET Transistor
|
 Fairchild Semiconductor |
RFP12N06
|
215Kb/10P |
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
|
RFP12N06RLE
|
215Kb/10P |
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
 Intersil Corporation |
RFP12N06RLE
|
49Kb/6P |
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs
July 1999 |
 VBsemi Electronics Co.,... |
RFP12N06RLE
|
1Mb/9P |
N-Channel 60 V (D-S) MOSFET
|
 Inchange Semiconductor ... |
RFP12N06RLE
|
372Kb/2P |
isc N-Channel MOSFET Transistor
|
 Intersil Corporation |
RFP12N08
|
43Kb/5P |
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
October 1998 |