| производитель | номер детали | датащи | подробное описание детали |
 NXP Semiconductors |
PDTC115EE
|
93Kb/14P |
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
2004 Aug 06 |
|
PDTC115EE
|
93Kb/14P |
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
2004 Jul 30 |
|
PDTC115EE
|
188Kb/14P |
NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓
2004 Aug 06 |
 Nexperia B.V. All right... |
PDTC115EE
|
420Kb/15P |
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
2004 Aug 06 |
|
PDTC115EE
|
422Kb/15P |
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
2004 Jul 30 |
|
PDTC115EE
|
420Kb/15P |
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
2004 Aug 06 |
 NXP Semiconductors |
PDTC115EEF
|
93Kb/14P |
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
2004 Aug 06 |
|
PDTC115EEF
|
93Kb/14P |
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
2004 Jul 30 |
|
PDTC115EEF
|
188Kb/14P |
NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓
2004 Aug 06 |
 Nexperia B.V. All right... |
PDTC115EEF
|
420Kb/15P |
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
2004 Aug 06 |
|
PDTC115EEF
|
422Kb/15P |
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
2004 Jul 30 |
|
PDTC115EEF
|
420Kb/15P |
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
2004 Aug 06 |
 NXP Semiconductors |
PDTC115EK
|
93Kb/14P |
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
2004 Aug 06 |
|
PDTC115EK
|
93Kb/14P |
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
2004 Jul 30 |
|
PDTC115EK
|
188Kb/14P |
NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓
2004 Aug 06 |
 Nexperia B.V. All right... |
PDTC115EK
|
420Kb/15P |
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
2004 Aug 06 |
|
PDTC115EK
|
422Kb/15P |
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
2004 Jul 30 |
|
PDTC115EK
|
420Kb/15P |
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
2004 Aug 06 |
|
PDTC115EMB
|
955Kb/12P |
NPN resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓
|
 NXP Semiconductors |
PDTC115ES
|
93Kb/14P |
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
2004 Aug 06 |