| производитель | номер детали | датащи | подробное описание детали |
Fairchild Semiconductor |
MTP2N40
|
147Kb/5P |
N-Channel Power MOSFETs, 2.25A, 350-400V
|
New Jersey Semi-Conduct... |
MTP2N40
|
791Kb/3P |
IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs
|
|
MTP2N40
|
791Kb/3P |
N-Channel Power MOSFETs, 2.25 A, 350-400 V
|
ARTSCHIP ELECTRONICS CO... |
MTP2N40
|
360Kb/5P |
N-Channel Power MOSFETs
|
Inchange Semiconductor ... |
MTP2N40
|
300Kb/2P |
isc N-Channel MOSFET Transistor
|
Motorola, Inc |
MTP2N40E
|
217Kb/8P |
TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM
|
ON Semiconductor |
MTP2N40E
|
213Kb/7P |
N?묬hannel Enhancement?묺ode Silicon Gate
August, 2006 ??Rev. 1 |
VBsemi Electronics Co.,... |
MTP2N40E
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
New Jersey Semi-Conduct... |
MTP2N18
|
113Kb/3P |
N-Channel Power MOSFETs 3.5 A, 150-200 V
|
|
MTP2N18
|
113Kb/3P |
N-Channel Power MOSFETs 3.5 A, 150-200 V
|
ARTSCHIP ELECTRONICS CO... |
MTP2N18
|
344Kb/5P |
N-Channel Power Mosfets
|
Inchange Semiconductor ... |
MTP2N18
|
301Kb/2P |
isc N-Channel MOSFET Transistor
|
Motorola, Inc |
MTP2N20
|
176Kb/5P |
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
New Jersey Semi-Conduct... |
MTP2N20
|
113Kb/3P |
N-Channel Power MOSFETs 3.5 A, 150-200 V
|
|
MTP2N20
|
113Kb/3P |
N-Channel Power MOSFETs 3.5 A, 150-200 V
|
ARTSCHIP ELECTRONICS CO... |
MTP2N20
|
344Kb/5P |
N-Channel Power Mosfets
|
Inchange Semiconductor ... |
MTP2N20
|
301Kb/2P |
isc N-Channel MOSFET Transistor
|
|
MTP2N25
|
300Kb/2P |
isc N-Channel MOSFET Transistor
|
Fairchild Semiconductor |
MTP2N35
|
147Kb/5P |
N-Channel Power MOSFETs, 2.25A, 350-400V
|
New Jersey Semi-Conduct... |
MTP2N35
|
791Kb/3P |
IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs
|
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