| производитель | номер детали | датащи | подробное описание детали |
International Rectifier |
IRLML2803GPBF
|
230Kb/8P |
Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
|
VBsemi Electronics Co.,... |
IRLML2803GTRPBF
|
1Mb/9P |
N-Channel 30-V (D-S) MOSFET
|
International Rectifier |
IRLML2803PBF
|
258Kb/9P |
ULTRA LOW ON RESISFANCE
|
|
IRLML2803PBF
|
296Kb/9P |
HEXFET Power MOSFET
|
|
IRLML2803PBF-1
|
247Kb/8P |
Compatible with Existing Surface Mount Techniques
|
|
IRLML2803PBF-1
|
247Kb/8P |
Compatible with Existing Surface Mount Techniques
|
|
IRLML2803PBF
|
258Kb/9P |
ULTRA LOW ON RESISFANCE
|
EVER SEMICONDUCTOR CO.,... |
IRLML2803TR
|
377Kb/7P |
MOSFET
Rev:2023A2 |
Guangdong Youtai Semico... |
IRLML2803TR
|
449Kb/7P |
Generation VTechnology UltraLowOn- Resistance
|
VBsemi Electronics Co.,... |
IRLML2803TRPBF
|
1Mb/9P |
N-Channel 30-V (D-S) MOSFET
|
International Rectifier |
IRLML2803TRPBF
|
230Kb/8P |
Generation V Technology, Ultra Low On-Resistance
|
EVER SEMICONDUCTOR CO.,... |
IRLML2803
|
377Kb/7P |
MOSFET
Rev:2023A2 |
Guangdong Youtai Semico... |
IRLML2803
|
449Kb/7P |
Generation VTechnology UltraLowOn- Resistance
|
International Rectifier |
IRLML2803
|
81Kb/8P |
HEXFET Power MOSFET
|
|
IRLML2803
|
191Kb/9P |
Power MOSFET(Vdss=30V, Rds(on)=0.25ohm)
|
Infineon Technologies A... |
IRLML2030
|
1Mb/33P |
iMOTION™ Modular Application Design Kit
Revision 1.6 2018-11-27 |
EVER SEMICONDUCTOR CO.,... |
IRLML2030
|
390Kb/8P |
MOSFET
Rev:2023A2 |
Guangdong Youtai Semico... |
IRLML2030
|
590Kb/8P |
Load/ System Switch
|
Infineon Technologies A... |
IRLML2030
|
1Mb/41P |
iMOTION™ Modular Application Design Kit
Revision 1.6 2019-07-16 |
International Rectifier |
IRLML2030PBF
|
272Kb/10P |
Compatible with existing Surface Mount Techniques
|
Russian ▼ 
English
Chinese
German
Japanese
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand