| производитель | номер детали | датащи | подробное описание детали |
International Rectifier |
IRGBC30F
|
98Kb/35P |
Fit Rate / Equivalent Device Hours
|
|
IRGBC30F
|
246Kb/6P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A)
|
|
IRGBC30K
|
98Kb/35P |
Fit Rate / Equivalent Device Hours
|
|
IRGBC30K
|
239Kb/6P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
|
IRGBC30K-S
|
266Kb/6P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
|
IRGBC30KD2
|
98Kb/35P |
Fit Rate / Equivalent Device Hours
|
|
IRGBC30KD2
|
145Kb/9P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT
|
|
IRGBC30M
|
98Kb/35P |
Fit Rate / Equivalent Device Hours
|
|
IRGBC30M
|
237Kb/6P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)
|
|
IRGBC30M-S
|
250Kb/6P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)
|
|
IRGBC30MD2
|
98Kb/35P |
Fit Rate / Equivalent Device Hours
|
|
IRGBC30MD2
|
416Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=16A)
|
|
IRGBC30MD2-S
|
425Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=16A)
|
|
IRGBC30S
|
98Kb/35P |
Fit Rate / Equivalent Device Hours
|
|
IRGBC30S
|
252Kb/6P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A)
|
|
IRGBC30U
|
98Kb/35P |
Fit Rate / Equivalent Device Hours
|
|
IRGBC30U
|
244Kb/6P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A)
|
|
IRGBC30UD2
|
98Kb/35P |
Fit Rate / Equivalent Device Hours
|
|
IRGBC30UD2
|
413Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=12A)
|
|
IRGBC30
|
246Kb/6P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A)
|
Russian ▼ 
English
Chinese
German
Japanese
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand