IRG4BC30WS датащи, PDF

быстрый вызов	IRG4BC30WS(1) резутат.
соответствуя, Like	IRG4BC30WS(1)
начиная	No Data
канчевая	No Data
включая	No Data

производитель

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRG4BC30WS	188Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRG4BC30W-S	188Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)
	IRG4BC30W-SPBF	275Kb/9P	INSULATED GATE BIPOLAR TRANSISTOR
	IRG4BC30W-SPBF	585Kb/9P	INSULATED GATE BIPOLAR TRANSISTOR
	IRG4BC30W-SPBF	275Kb/9P	INSULATED GATE BIPOLAR TRANSISTOR
	IRG4BC30WPBF	287Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR
	IRG4BC30WPBF	582Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
	IRG4BC30WPBF	287Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR
	IRG4BC30W	582Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
	IRG4BC30F	167Kb/8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRG4BC30F	177Kb/9P	INSULATED GATE BIPOLAR TRANSISTOR
	IRG4BC30F	98Kb/35P	Fit Rate / Equivalent Device Hours
	IRG4BC30F-STRLP	177Kb/9P	INSULATED GATE BIPOLAR TRANSISTOR
Inchange Semiconductor ...	IRG4BC30FD	387Kb/2P	IGBT
International Rectifier	IRG4BC30FD	98Kb/35P	Fit Rate / Equivalent Device Hours
	IRG4BC30FD	412Kb/10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRG4BC30FD-S	1Mb/11P	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
	IRG4BC30FD-SPBF	1Mb/11P	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
	IRG4BC30FD-SPBF	1Mb/12P	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
	IRG4BC30FD-SPBF	1Mb/11P	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
	IRG4BC30FD1	361Kb/10P	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

IRG4BC30WS датащи, PDF

IRG4BC30WS Datasheet ,PDF

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