IRG4BC30FD датащи, PDF

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRG4BC30FD	412Kb/10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
International Rectifier	IRG4BC30FD	98Kb/35P	Fit Rate / Equivalent Device Hours
Inchange Semiconductor ...	IRG4BC30FD	387Kb/2P	IGBT
International Rectifier	IRG4BC30FD-S	1Mb/11P	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
	IRG4BC30FD-SPBF	1Mb/12P	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
	IRG4BC30FD-SPBF	1Mb/11P	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
	IRG4BC30FD-SPBF	1Mb/11P	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
	IRG4BC30FD1	361Kb/10P	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
	IRG4BC30FD1PBF	421Kb/11P	Fast CoPack IGBT
	IRG4BC30FD1PBF	415Kb/10P	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
	IRG4BC30FD1PBF	415Kb/10P	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
	IRG4BC30FDPBF	3Mb/11P	Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A )
	IRG4BC30FDPBF	397Kb/10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
	IRG4BC30FDPBF	397Kb/10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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