| производитель | номер детали | датащи | подробное описание детали |
IP SEMICONDUCTOR CO., L... |
IPT2008-CEA
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2008-BEA
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2008-BEB
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2008-DEA
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2008-DEB
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2006-BEA
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2006-BEB
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2006-CEA
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2006-CEB
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2006-DEA
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2006-DEB
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q06-CEA
|
208Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q06-CEB
|
208Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q06-SEA
|
208Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q06-SEB
|
208Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q06-TEA
|
208Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q06-TEB
|
208Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q08-CEA
|
208Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q08-CEB
|
208Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q08-SEA
|
208Kb/4P |
High current density due to double mesa technology
|
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