| производитель | номер детали | датащи | подробное описание детали |
Samtec, Inc |
IPT1
|
561Kb/2P |
FLEXIBLE POWER SYSTEMS
|
|
IPT1
|
508Kb/1P |
SHROUDED POWER CONNECTOR SET
|
|
IPT1-115-01-S-D-RA
|
508Kb/1P |
SHROUDED POWER CONNECTOR SET
|
Pepperl+Fuchs Inc. |
IPT1-FP
|
481Kb/2P |
Read/write head
|
Infineon Technologies A... |
IPT111N20NFD
|
1,010Kb/10P |
OptiMOS짧3 Power-Transistor, 200 V
Rev.2.1,2016-02-23 |
IP SEMICONDUCTOR CO., L... |
IPT1206-BEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-BEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-BEF
|
237Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-CEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-CEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-CEF
|
237Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-SEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-SEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-SEF
|
237Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-TEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-TEB
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1206-TEF
|
237Kb/4P |
High current density due to double mesa technology
|
|
IPT1208-BEA
|
226Kb/4P |
High current density due to double mesa technology
|
|
IPT1208-BEB
|
225Kb/4P |
High current density due to double mesa technology
|
|
IPT1208-BEF
|
234Kb/4P |
High current density due to double mesa technology
|
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