IDW80C65D2 датащи, PDF

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	IDW80C65D1	1Mb/11P	Emitter Controlled Diode Rapid 1 Common Cathode Series Rev.2.1,2014-12-10
Inchange Semiconductor ...	IDW80C65D1	301Kb/2P	Ultrafast Rectifier Diode
Infineon Technologies A...	IDW100E60	165Kb/6P	Fast Switching EmCon Diode Rev. 1.1 Mar 06
	IDW100E60	188Kb/7P	Fast Switching EmCon Diode Rev. 2.1 Nov 09
	IDW100E60	302Kb/7P	Fast Switching Emitter Controlled Diode Rev. 2.3 20.09.2013
Inchange Semiconductor ...	IDW100E60	282Kb/2P	Fast Switching EmCon Diode
Infineon Technologies A...	IDW100E60FKSA1	302Kb/7P	Fast Switching Emitter Controlled Diode Rev. 2.3 20.09.2013
	IDW100E60	188Kb/7P	Fast Switching EmCon Diode Rev. 2.1 Nov 09
	IDW100E60	303Kb/7P	Fast Switching Emitter Controlled Diode Rev. 2.3 20.09.2013
	IDW100E60	302Kb/7P	Fast Switching Emitter Controlled Diode Rev. 2.3 20.09.2013
	IDW10G120C5B	815Kb/10P	Revolutionary semiconductor material - Silicon Carbide Rev. 2.0 2014-06-10
	IDW10G65C5	417Kb/2P	650V SiC thinQ!??Generation 5 diodes 09 / 2012
	IDW10G65C5	1Mb/11P	5t h Generation thinQ!TM 650V SiC Schottky Diode Rev. 2.2, 2013-01-15
	IDW10G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDW10G65C5	1Mb/11P	5t h Generation thinQ!TM 650V SiC Schottky Diode Rev. 2.2, 2013-01-15
	IDW10S120	743Kb/10P	Power Management & Mul t imarket Rev. 2.0,<2012-03-23>
	IDW10S120FKSA1	743Kb/10P	Power Management & Mul t imarket Rev. 2.0,<2012-03-23>
	IDW12G65C5	417Kb/2P	650V SiC thinQ!??Generation 5 diodes 09 / 2012
	IDW12G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDW15E65D2	1Mb/10P	Qualified according to JEDEC for target applications Rev.2.2,2014-08-26

IDW80C65D2 датащи, PDF

IDW80C65D2 Datasheet ,PDF

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