производитель | номер детали | датащи | подробное описание детали |
Renesas Technology Corp |
HAT1108C
|
89Kb/7P |
Silicon P Channel MOS FET Power Switching
|
HAT1110R
|
212Kb/8P |
Silicon P Channel Power MOS FET Power Switching
|
HAT1110R-EL-E
|
212Kb/8P |
Silicon P Channel Power MOS FET Power Switching
|
HAT1111C
|
147Kb/7P |
Silicon P Channel MOS FET Power Switching
|
HAT1111C
|
122Kb/7P |
Silicon P Channel MOS FET
|
HAT1111C-EL-E
|
147Kb/7P |
Silicon P Channel MOS FET Power Switching
|
HAT1111C
|
122Kb/7P |
Silicon P Channel MOS FET Power Switching
|
HAT1111C
|
387Kb/7P |
-60V, -2A, 307m max Silicon P Channel MOS FET Power Switching
|
SHENZHEN DOINGTER SEMIC... |
HAT1123R
|
1Mb/4P |
P-Channel MOSFET uses advanced trench technology
|
Renesas Technology Corp |
HAT1126R
|
126Kb/8P |
Silicon P Channel Power MOS FET High Speed Power Switching
|
HAT1126R
|
136Kb/2P |
Power MOSFETs and IGBT for PDP
|
HAT1126R-EL-E
|
126Kb/8P |
Silicon P Channel Power MOS FET High Speed Power Switching
|
HAT1126RJ
|
126Kb/8P |
Silicon P Channel Power MOS FET High Speed Power Switching
|
HAT1126RJ-EL-E
|
126Kb/8P |
Silicon P Channel Power MOS FET High Speed Power Switching
|
HAT1126R
|
137Kb/10P |
Silicon P Channel Power MOS FET High Speed Power Switching
|
HAT1127H
|
87Kb/7P |
Silicon P Channel Power MOS FET Power Switching
|
HAT1127H
|
106Kb/9P |
Silicon P Channel Power MOS FET Power Switching
|
HAT1127H-EL-E
|
87Kb/7P |
Silicon P Channel Power MOS FET Power Switching
|
HAT1127H
|
106Kb/9P |
Silicon P Channel Power MOS FET Power Switching
|
SHENZHEN DOINGTER SEMIC... |
HAT1129R
|
2Mb/7P |
P-Channel MOSFET uses advanced trench technology
|