| производитель | номер детали | датащи | подробное описание детали |
 Hitachi Semiconductor |
2SJ280
|
122Kb/8P |
SILICON P-CHANNEL MOS FET
|
|
2SJ280L
|
122Kb/8P |
SILICON P-CHANNEL MOS FET
|
|
2SJ280S
|
122Kb/8P |
SILICON P-CHANNEL MOS FET
|
 Sanyo Semicon Device |
2SJ281
|
83Kb/3P |
Very High-Speed Switching Applications
|
|
2SJ284
|
73Kb/3P |
Very High-Speed Switching Applications
|
|
2SJ287
|
81Kb/3P |
Very High-Speed Switching Applications
|
 Guangdong Kexin Industr... |
2SJ287
|
42Kb/1P |
P-Channel MOS Silicon FET
|
|
2SJ287
|
1Mb/3P |
P-Channel MOSFET
|
 Sanyo Semicon Device |
2SJ288
|
82Kb/3P |
Very High-Speed Switching Applications
|
 Guangdong Kexin Industr... |
2SJ288
|
42Kb/1P |
P-Channel MOS Silicon FET
|
|
2SJ288
|
1Mb/3P |
P-Channel MOSFET
|
 Toshiba Semiconductor |
2SJ200
|
181Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
|
2SJ200
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
|
2SJ200
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
 Inchange Semiconductor ... |
2SJ200
|
313Kb/2P |
isc P-Channel MOSFET Transistor
|
 Toshiba Semiconductor |
2SJ200-Y
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
|
2SJ201
|
182Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
|
2SJ201
|
448Kb/5P |
High-Power Amplifier Application
|